| PART |
Description |
Maker |
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| LXT971ABE M25P64-VME6P M25P64-VMF6P M27C400206 M27 |
Series One Watt Zeners
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
Serial access Real-Time Clock with alarm
|
1N4728A
STMICROELECTRONICS[STMicroelectronics]
|
| M27W801-200N6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
|
ST Microelectronics
|
| M29W800DB M29W800DT M29W800DB70M1T M29W800DB70M6T |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
Low-Power Configurable Multiple-Function Gate 6-SOT-23 -40 to 85 8兆（1兆x812KB的x16插槽，引导块V电源快闪记忆
Low-Power Configurable Multiple-Function Gate 6-DSBGA -40 to 85 8兆（1兆x812KB的x16插槽，引导块V电源快闪记忆
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory
|
STMicroelectronics N.V.
ST Microelectronics
|
| M29F080D M29F080D55N6T -M29F080D70M1T |
8 Mbit (1Mb x8 / Uniform Block) 5V Supply Flash Memory
8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory 8兆（1兆8，统一座）5V电源快闪记忆
|
ST Microelectronics
|
| M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体兆位128KB的x16的SRAM，多个存储产
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体2兆位128KB的x16的SRAM，多个存储产
PV76L14-18P
|
http://
STMicroelectronics N.V.
意法半导
|
| M27W801 -M27W801 |
8Mbit (1Mb x 8) Low Voltage OTP EPROM(8M位低压一次可编程 EPROM)
8Mbit (1Mb x 8) Low Voltage OTP EPROM(8M浣?????娆″?缂?? EPROM)
|
意法半导
|
| M29W008EB70N1E M29W008EB70N1F M29W008EB70N6E M29W0 |
Low Noise High-Speed Precision Single Supply Operational Amplifier 8-PDIP
8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M27W016-100B1 M27W016-100M1 M27W016-100N1 M27W016- |
16 MBIT (1MB X16) 3V SUPPLY FLEXIBLEROM™ MEMORY
|
ST Microelectronics
|
| HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
